Semiconductor Informations

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| 2N7002T Diodes Incorporated - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Output Leakage Ultra-Small Surface Mount Package SOT-523 TOP VIEW A D B C G G S NEW PRODUCT Dim A B C D G H N M Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 |
| 2N7002TB Pan Jit International - 60V N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES RDS(ON), VGS@10V,IDS@500mA=5Ω RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. Lead free in compliance with EU RoHS 2011, 65, EU directi |
| 2N70 N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi |
| 2N70-M N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics |