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Search 2PG002 Datasheet (PDF)
Panasonic
2PG002
Insulated Gate Bipolar Transistor, 40A I(C), 410V V(BR)CES, N-Channel, TO-220AB
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File Download: 2PG002.PDF
[ Descriptions ]
| 2PG002 Panasonic - N-Channel Enhancement Mode IGBT This product complies with the RoHS Directive (EU 2002, 95, EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.) Package Code TO-220F-A1 Marking Symbol: 2PG002 Pin Name 1. Gate 2. Collector 3. Emitter Parameter |
Related Information
| 2PG001 N-channel enhancement mode IGBT - Panasonic This product complies with the RoHS Directive (EU 2002, 95, EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High speed hall time: tf = 250 nsec(typ.) Package |
| 2PG002 N-Channel Enhancement Mode IGBT - Panasonic This product complies with the RoHS Directive (EU 2002, 95, EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.) Package |