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2SA1020RLRAG
Bipolar (Bjt) Single Transistor, Pnp, -50 V, 100 Mhz, 1.5 W, -2 A, 40 Rohs Compliant: Yes
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[ Descriptions ]


2SA1020 Toshiba Semiconductor - TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC2655 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltag
2SA1020 ETC - TO-92MOD Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collec


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2SA0684 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60




Related Part Number

2SC1623 | 2SA814 |

2SD880Y | 2SC3402 |

2SC2655 | 2SC2027 |

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