Semiconductor Informations

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| 2SA1259 Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Darlington Transistors Ordering number:ENN1059D PNP, NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259, 2SC3145 60V, 5A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1259, 2SC3145] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1259 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
| 2SA1259 Inchange Semiconductor - Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145 isc Product Specification 2SA1259 APPLICATIONS ·Designed for general purpose amplifier high fT and high speed switching applications. ABSOLUTE MAXIMUM RATING |
| 2SA0683 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
| 2SA0684 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |