Semiconductor Informations
| 2SA1943BL NELL SEMICONDUCTOR - Silicon PNP triple diffusion planar transistor SEMICONDUCTOR 2SA1943BL Series Silicon PNP triple diffusion planar transistor -15A, -230V, 150W RoHS RoHS Nell High Power Products 20.00±0.20 18.00 ø3.30 ± 0.20 5.00 3.00 2.00 9.00 4.00 6.00 20.50 26.00 TO-3PL 2.50 (typ.) 3.00 FEATURES High breakdown voltage, V CEO = -230V (min) Complementary to 2SC5200BL TO-3PL package which can be installed to the heat sink with one screw 5.45 ± 0 |
| 2SA1943 Toshiba Semiconductor - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm High collector voltage: VCEO = 230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage |
| 2SA0683 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
| 2SA0684 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
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