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| 2SA1962 Toshiba Semiconductor - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 230 V Collector-emitter voltage |
| 2SA1962 SavantIC - SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5242 ·High collector voltage: VCEO=-230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified out |
Related Information
| 2SA0683 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
| 2SA0684 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |