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Panasonic
2SA1967
Power Bipolar Transistor, 0.01A I(C), 900V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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[ Descriptions ]
| 2SA1967 Sanyo Semicon Device - NPN Triple Diffused Planar Silicon Transistor Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min= 900V). · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volt |
Related Information
| 2SA0683 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
| 2SA0684 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
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