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Toshiba
2SA1972
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 4,619 | Visit Site | |||
| Worldway Electronics | 22,293 | Visit Site | |||
| Anlinkda | 38,922 | 0.15 | Visit Site | ||
| Run Hong Electronics | 3,368 | 0.0765 | Visit Site | ||
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File Download: 2SA1972.PDF
[ Descriptions ]
| 2SA1972 Toshiba Semiconductor - TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Sym |
Related Information
| 2SA0683 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
| 2SA0684 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60 |
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