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Toshiba
2SA2069(TE12L,F)
Bipolar transistor - Bipolar Junction Transistor (BJT)(BJT) Pb-F PW-MINI-PLN, ACTIVE,
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[ Descriptions ]


2SA2069 Toshiba Semiconductor - Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications 2SA2069 Unit: mm High DC current gain: hFE = 200 to 500 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 37 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base volta


Related Information


2SA0683 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60
2SA0684 Silicon PNP Epitaxial Transistor - Panasonic Semiconductor

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm - Features Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60




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