Semiconductor Informations

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| 2SB1241 ROHM Semiconductor - Power Transistor 2SB1260 , 2SB1181 , 2SB1241 Transistors Power Transistor ( 80V, 1A) 2SB1260 , 2SB1181 , 2SB1241 !Features 1) High breakdown voltage and high current. BVCEO= 80V, IC= 1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 , 2SD1863 , 2SD1733. !External dimensions (Units : mm) 2SB1260 4.5+0.2 0.1 1.6±0.1 2SB1181 1.5±0.3 6.5±0.2 5.1+0.2 0.1 C0.5 2.3+0.2 0.1 0.5±0.1 0. |
| 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur |
| 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H |