Semiconductor Informations

File Download: 2SB1390.PDF
| 2SB1390 Hitachi Semiconductor - Silicon PNP Triple Diffused 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 12 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I |
| 2SB1390 SavantIC - SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1390 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO |
| 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur |
| 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H |