Semiconductor Informations
Search 2SB1642 Datasheet (PDF)
Toshiba
2SB1642
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Best Source | 1,196 | 0.4552 | Visit Site | ||
Powered by Octopart | |||||
File Download: 2SB1642.PDF
[ Descriptions ]
| 2SB1642 Toshiba Semiconductor - TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
| 2SB1642 SavantIC - SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION ·With TO-220F package ·Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRI |
Related Information
| 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur |
| 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H |
Related Part Number
2SC1623 | 2SA814 |2SD880Y | 2SC3402 |
2SC2655 | 2SC2027 |