Semiconductor Informations
Search 2SB507 Datasheet (PDF)
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| Worldway Electronics | 29,397 | Visit Site | |||
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[ Descriptions ]
| 2SB507 Mospec Semiconductor - POWER TRANSISTORS(3.0A/60V/30W) A A A |
| 2SB507 Wing Shing Computer Components - PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) 2SB507 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD313 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25°c) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -60 -7 -3 30 150 -50~150 Un |
Related Information
| 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur |
| 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H |
Related Part Number
2SC1623 | 2SA814 |2SD880Y | 2SC3402 |
2SC2655 | 2SC2027 |