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2SB562 Hitachi Semiconductor - Silicon PNP Epitaxial

2SB562 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperatur

2SB562 Unisonic Technologies - LOW FREQUENCY POWER LOW FREQUENCY POWER

UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES * Low frequency power amplifier * Complement to 2SD468 1 TO-92 1 TO-92NL ORDERING INFORMATION Order Number Lead Free Halogen Free 2SB562L-x-T92-B 2SB562G-x-T92-B 2SB562L-x-T92-K 2SB562G-x-T92-K 2SB562L-x-T9N-B 2SB562G-x-T9N-B 2SB562L-x-T9N-K 2SB562G-x-T9N-K Package TO-9

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2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics

2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur

2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics

2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H

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