Semiconductor Informations
| 2SC1383 Panasonic Semiconductor - Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 5.9± 0.2 Unit: mm 4.9± 0.2 q q Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 55 ~ +150 Unit V 2.54± 0.15 +0.3 +0.2 s Absolute Maximum R |
| 2SC1383L Secos - (2SC1383L / 2SC1384L) NPN Silicon General Purpose Transistor 2SC1383L, 2SC1384L Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.9±0.2 NPN Silicon General Purpose Transistor TO-92L 3 .9 ±0.2 FEATURE Power dissipation 2.0 +0.3 0.2 14 ±0. 2 1 0. 45 +0. 0.1 05 0.4 0 +0. 0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V O |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |
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