Semiconductor Informations
| 2SC1623 NEC - AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS PACKAGE DIMENSIONS in millimeters 2.8 ± 0.2 0.4 +0.1 0.05 1.5 0.65 +0.1 0.15 0.95 Maximum Voltages and Current (TA = 25 ˚C) Collector to Base |
| 2SC1623 MCC - NPN Silicon Epitaxial Transistors MCC Features omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC1623 High DC Current Gain: hFE=200 TYP.(V CE=6.0V, IC=1.0mA) High voltage: VCEO=50V NPN Silicon Epitaxial Transistors Unit V V V mA mW O C O C F Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Curren |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |
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