Semiconductor Informations
| 2SC1959 Toshiba Semiconductor - Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC1959 Unit: mm · Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA · 1 watt amplifier applications. · Complementary to 2SA562TM. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage |
| 2SC1959 Micro Commercial Components - Transistor MCC Features omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC1959 Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA 1 Watt Amplifier applications Complementary to 2SA562TM. Power Silicon NPN Transistor TO-92 Pin Configuration Bott |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |