Semiconductor Informations

File Download: 2SC1969.PDF
| 2SC1969 Mitsubishi Electric Semiconductor - NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications) w w w .d e e h s a t a . u t4 m o c |
| 2SC1969 eleflow - silicon NPN epitaxial planar type transistor Description The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications. Features High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz Emitter ballasted construction for reliability and performance. Manufactured incorporating recyclable RoHS compliant materials. Ability to periodically w |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |