Semiconductor Informations

File Download: 2SC2120.PDF
| 2SC2120 Toshiba Semiconductor - TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction te |
| 2SC2120 Micro Electronics - (2SCxxxx) Medium Power Amplifiers and Switches w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |