Semiconductor Informations
| 2SC2482 Toshiba Semiconductor - 300V, 100mA, Silicon NPN TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2482 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications 2SC2482 Unit: mm High breakdown voltage: VCEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Recommended for chroma output and driver applications for line-operated TV horizontal. Max |
| 2SC2482 LGE - NPN Transistor 2SC2482 TO-92MOD Transistor (NPN) 1 1. EMITTER 2 2. COLLECTOR 3 3. BASE Features High voltage :Vceo=300V Small collector output capacitance: Cob=3.0pF(Typ) TO-92MOD 5.800 6.200 0.400 0.600 0.900 1.100 8.400 8.800 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage C |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |
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