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2SC2570A
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
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[ Descriptions ]


2SC2570A NEC - HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES Low noise and high gain Wide dynamic range : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA ORDERING
2SC2570A-T NEC - HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES Low noise and high gain Wide dynamic range : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA ORDERING


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