Semiconductor Informations
File Download: 2SC2655.PDF
| 2SC2655 Toshiba Semiconductor - Silicon NPN Epitaxial Type TRANSISTOR 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Maximum Ratings (Ta = 25°C) Characteristics Coll |
| 2SC2655 Unisonic Technologies - POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS UNISONIC TECHNOLOGIES CO., LTD 2SC2655 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.) NPN SILICON TRANSISTOR 1 TO-92NL *Pb-free plating product number: 2SC2655L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |
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