Search 2SC3356 Datasheet (PDF)

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2SC3356-T1B-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
DistributorStock110100Link
Weyland Electronics Group Pte. Ltd.15,0000.3Visit Site
Worldway Electronics22,6050.08490.0833Visit Site
GreenTree Electronics2,295Visit Site
Anlinkda31,7590.1270.1130.093Visit Site
RC Electronics28,5260.090.080.07Visit Site
ODG (Origin Data Global)25,805Visit Site
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[ Descriptions ]


2SC3356 NEC - MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 0.15 +0.1 FEATURES Low Noise and High Ga
2SC3356 Unisonic Technologies - NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC, DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). FEATURES


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Related Part Number

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2SD880Y | 2SC3402 |

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