Semiconductor Informations
| 2SC3679B NELL SEMICONDUCTOR - Silicon NPN triple diffusion planar transistor(High voltage switching transistor) SEMICONDUCTOR 2SC3679B Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A, 800V, 100W RoHS RoHS Nell High Power Products 9 67 J C3 30 2S 12 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 min 4.0 max 3 2 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 FEATURES High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward |
| 2SC3679 Sanken electric - Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) 2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25°C) 150 55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |