Semiconductor Informations
| 2SC3709 Toshiba Semiconductor - NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base cur |
| 2SC3709 Inchange Semiconductor - Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |
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