Semiconductor Informations
Search 2SC410 Datasheet (PDF)
ROHM
2SC4102U3HZGT106R
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| CoreStaff | 3,000 | 0.121 | Visit Site | ||
| Verical | 1,897 | Visit Site | |||
| Arrow Electronics | 1,897 | 0.5331 | Visit Site | ||
| TME | 3,212 | Visit Site | |||
| Newark | 2,210 | Visit Site | |||
| Mouser | 2,297 | 0.59 | Visit Site | ||
| DigiKey | 3,281 | 0.59 | Visit Site | ||
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File Download: 2SC410.PDF
[ Descriptions ]
| 2SC4102 ROHM Semiconductor - High-voltage Amplifier Transistor(120V/ 50mA) 2SC4102 , 2SC3906K , 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 , 2SC3906K , 2SC2389S !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 , 2SA1514K , 2SA1038S. !External dimensions (Units : mm) 2SC4102 (1) 0.65 0.65 0.7 0.8 0.3 (3) 1.25 0.2 !Absolute maximum ratings (Ta=25°C) 0.15 2.1 Parameter Collector-base voltage Coll |
| 2SC4104 Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3172 PNP, NPN Epitaxial Planar Silicon Transistors 2SA1580, 2SC4104 High-Definition CRT Display Applications Features · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580, 2SC4104] ( ) : 2SA1580 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter V |
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Related Part Number
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