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| 2SC4102 ROHM Semiconductor - High-voltage Amplifier Transistor(120V/ 50mA) 2SC4102 , 2SC3906K , 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 , 2SC3906K , 2SC2389S !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 , 2SA1514K , 2SA1038S. !External dimensions (Units : mm) 2SC4102 (1) 0.65 0.65 0.7 0.8 0.3 (3) 1.25 0.2 !Absolute maximum ratings (Ta=25°C) 0.15 2.1 Parameter Collector-base voltage Coll |
| 2SC4104 Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3172 PNP, NPN Epitaxial Planar Silicon Transistors 2SA1580, 2SC4104 High-Definition CRT Display Applications Features · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580, 2SC4104] ( ) : 2SA1580 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter V |
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| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |