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2SC4747
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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[ Descriptions ]


2SC4747 Hitachi Semiconductor - Silicon NPN Triple Diffused

2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCBO = 1500 V High speed switching tf ≤ 0.3 s Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector sur
2SC4747 SavantIC - SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4747 DESCRIPTION ·With TO-3PFM package ·High speed switching ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO


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