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| 2SC5252 Hitachi Semiconductor - Silicon NPN Triple Diffused Planar 2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf ≤ 0.15 sec(typ.) Isolated package TO 3P FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector |
| 2SC5252 Inchange Semiconductor - Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5252 DESCRIPTION ·High speed switching High breakdown voltage VCBO = 1500 V APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltag |
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| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |
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