Semiconductor Informations

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| 2SC5296 Sanyo Semicon Device - Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications w w w . D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Packag |
| 2SC5296 Inchange Semiconductor - Silicon NPN Power Transistors Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION ¡¤ With TO-3PML package ¡¤ High breakdown voltage, high reliability. ¡¤ High speed ¡¤ Built in damper diode APPLICATIONS ¡¤ Ultrahigh-definition CRT display ¡¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION ¡¤ Absolute maximum ratings(Ta=25¡æ |
| 2SC0108T2Dx-xx Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core - CT-Concept 2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica |
| 2SC0829 Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Paramete |