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2SC5508-T2B-A
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, NPN
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 1,844,116 | Visit Site | |||
| Verical | 1,844,116 | Visit Site | |||
| DigiKey Marketplace | 1,844,116 | Visit Site | |||
| Worldway Electronics | 27,852 | Visit Site | |||
| UnikeyIC | 1,724,986 | Visit Site | |||
| Anlinkda | 50,606 | 0.414 | Visit Site | ||
| Ansinor | 49,096 | Visit Site | |||
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File Download: 2SC5508.PDF
[ Descriptions ]
| 2SC5508 NEC - NPN SILICON RF TRANSISTOR FOR LOW NOISE/ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA fT = 25 GH- technology |
| 2SC5508-T2 NEC - NPN SILICON RF TRANSISTOR FOR LOW NOISE/ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA fT = 25 GH- technology |
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