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| 2SC898 Inchange Semiconductor - Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC898 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A APPLICATIONS ·Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector |
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