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Search 2SD1060 Datasheet (PDF)
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File Download: 2SD1060.PDF
[ Descriptions ]
| 2SD1060 Sanyo Semicon Device - 50V/5A Switching Applications Ordering number:686I PNP, NPN Epitaxial Planar Silicon Transistors 2SB824, 2SD1060 50V, 5A Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Package Dimensions unit:mm 2010C [2SB824, 2SD1060] Features · Low collector-to-emitter saturation voltage : VCE(sat)=( )0.4V max, IC=( )3A, IB=( )0.3A. ( ) : 2 |
| 2SD1060 Unisonic Technologies - NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max, IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base |
Related Information
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
Related Part Number
2SC1623 | 2SA814 |2SD880Y | 2SC3402 |
2SC2655 | 2SC2027 |