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2SD1062R
Power Bipolar Transistor, 12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 16,403 | Visit Site | |||
| Verical | 16,403 | Visit Site | |||
| Win Source | 20 | Visit Site | |||
| Worldway Electronics | 6,362 | Visit Site | |||
| ICSuperman Co. | 16,403 | 0.5158 | Visit Site | ||
| Easev | 1,746 | 0.3675 | Visit Site | ||
| Fmall Co., Limited | 27,420 | 0.558 | Visit Site | ||
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File Download: 2SD1062.PDF
[ Descriptions ]
| 2SD1062 Mospec Semiconductor - POWER TRANSISTORS(12A/50V/40W) A A A |
| 2SD1062 Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:723H PNP, NPN Epitaxial Planar Silicon Transistors 2SB826, 2SD1062 50V, 12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. Package Dimen |
Related Information
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
Related Part Number
2SC1623 | 2SA814 |2SD880Y | 2SC3402 |
2SC2655 | 2SC2027 |