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Search 2SD1157 Datasheet (PDF)
Fuji
2SD1157
Power Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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File Download: 2SD1157.PDF
[ Descriptions ]
| 2SD1157 Fuji Electric - TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHOING Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com |
| 2SD1157 Inchange Semiconductor - Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High DC Current Gain: hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATIN |
Related Information
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Related Part Number
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