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2SD1415A Toshiba Semiconductor - Silicon NPN Triple Diffused Type TRANSISTOR

2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage C
2SD1415 JMnic - Silicon NPN Power Transistors

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1415 DESCRIPTION ¡¤ With TO-220Fa package ¡¤ High DC current gain ¡¤ Low saturation voltage ¡¤ Complement to type 2SB1020 APPLICATIONS ¡¤ ¡¤ High power switching applications Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIP



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2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package



Related Part Number

2SC1623 | 2SA814 |

2SD880Y | 2SC3402 |

2SC2655 | 2SC2027 |