Semiconductor Informations
| 2SD1862 ROHM Semiconductor - Medium Power Transistor Medium power transistor (32V, 2A) 2SD1766 , 2SD1758 , 2SD1862 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC, IB = 2A , 0.2A) 2) Complements the 2SB1188 , 2SB1182 , 2SB1240 Structure Epitaxial planar type NPN silicon transistor 0.5±0.1 Dimensions (Unit : mm) 2SD1766 4.5+ 00..21 1.6±0.1 1.5 +0.2 0.1 2SD1758 6.5±0.2 5.1+ 00..21 C0.5 2.3+ 00..21 0.5±0.1 5.5+ 00..31 1.5± |
| 2SD1863 ROHM Semiconductor - Power Transistor Power Transistor (80V, 1A) 2SD1898 , 2SD1733 , 2SD1768S , 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 , 2SB1241 , 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+ 00..21 1.6±0.1 1.5 +00..12 0.5±0.1 4.0±0.3 2.5+ 00..21 ROHM : MPT3 EIAJ : SC-62 2SD |
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
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