Semiconductor Informations
Search 2SD2092 Datasheet (PDF)
Toshiba
2SD2092
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Worldway Electronics | 22,548 | Visit Site | |||
| Best Source | 27,705 | 1.3783 | Visit Site | ||
| SHENGYU ELECTRONICS | 14,270 | 0.1853 | Visit Site | ||
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[ Descriptions ]
| 2SD2092 Toshiba Semiconductor - NPN EPITAXIAL TYPE (SWITCHING/ LAMP/ SOLENOID DRIVE APPLICATIONS) 2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm High DC current gain: hFE (1) = 500 to 1500 Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collecto |
Related Information
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
Related Part Number
2SC1623 | 2SA814 |2SD880Y | 2SC3402 |
2SC2655 | 2SC2027 |