Search 2SD2107 Datasheet (PDF)

Inchange Semiconductor
2SD2107
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Powered by Octopart





File Download: 2SD2107.PDF


[ Descriptions ]


2SD2107 Hitachi Semiconductor - Silicon NPN Triple Diffused

2SD2107 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage


Related Information


2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor

Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut
2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package




Related Part Number

2SC1623 | 2SA814 |

2SD880Y | 2SC3402 |

2SC2655 | 2SC2027 |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.