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Search 2SD2353 Datasheet (PDF)
Toshiba
2SD2353
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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| SHENGYU ELECTRONICS | 9,933 | 0.1531 | Visit Site | ||
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File Download: 2SD2353.PDF
[ Descriptions ]
| 2SD2353 Toshiba Semiconductor - Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collect |
Related Information
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Related Part Number
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