Semiconductor Informations
| 2SD468 Hitachi Semiconductor - Silicon NPN Epitaxial 2SD468 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB562 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD468 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperatur |
| 2SD468 Unisonic Technologies - 1A, 20V, NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES * Low frequency power amplifier * Complement to 2SB562 1 TO-92 1 TO-92NL ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SD468-x-T92-B 2SD468L-x-T92-B 2SD468-x-T92-K 2SD468L-x-T92-K 2SD468-x-T9N-B 2SD468L-x-T9N-B 2SD468-x-T9N-K 2SD468L-x-T9N-K *Pb-free plating pro |
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
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