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| 2SD5703 Inchange Semiconductor - Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION ·High Breakdown Voltage：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter |
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Related Part Number
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