Semiconductor Informations
| 2SD600K Sanyo Semicon Device - 100V/120V/ 1A Low-Frequency Power Amp Applications Ordering number:346G PNP, NPN Epitaxial Planar Silicon Transistor 2SB631,631K, 2SD600,600K 100V, 120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100, 120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K, 2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO |
| 2SD600K SavantIC - SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION ·With TO-126 package ·Complement to type 2SB631, 631K ·High breakdown voltage VCEO100, 120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute ma |
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
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