Semiconductor Informations
| 2SD667A Hitachi Semiconductor - Silicon NPN Epitaxial 2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647, A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperatu |
| 2SD667A Jiangsu Changjiang Electronics - NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) FEATURES - Low frequency power amplifier - Complementary pair with 2SB647, A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle |
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
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