Semiconductor Informations
| 2SD882 NEC - NPN SILICON POWER TRANSISTOR DATA SHEET NPN SILICON POWER TRANSISTOR 2SD882 NPN SILICON POWER TRANSISTOR DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = 2 A, IB = 0.2 A) Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) Less cra |
| 2SD882S Unisonic Technologies - NPN EPITAXIAL SILICON TRANSISTOR UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772S APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C ,unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitt |
| 2SD0592A Silicon NPN epitaxial planar type - Panasonic Semiconductor Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) - Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 - Absolut |
| 2SD0601 Silicon NPN epitaxial planer type - Panasonic Semiconductor Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
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