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2SH20 Hitachi Semiconductor - Silicon N-Channel IGBT

ADE 208 293 (Z) 2SH20 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO 3P Features High speed switching Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel te


Related Information


2SH20 Silicon N-Channel IGBT - Hitachi Semiconductor

ADE 208 293 (Z) 2SH20 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO 3P Features High speed switching Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter volta
2SH23 2SH23 - ETC

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