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2SJ162-E
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[ Descriptions ]


2SJ162 Hitachi Semiconductor - Silicon P-Channel MOS FET

2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO


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2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270




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