Semiconductor Informations
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2SJ189 Sanyo Semicon Device - P-Channel Silicon MOSFET Ordering number:EN3762A Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ189] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP [2SJ189] 6.5 2.3 5.0 0.5 4 0.8 |
2SJ0536 Silicon P-Channel MOS FET - Panasonic Semiconductor Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape, magazine pa |
2SJ103 P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) - Toshiba Semiconductor 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 |