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[ Descriptions ]
| 2SJ334 Toshiba Semiconductor - Silicon P Channel MOS Type Field Effect Transistor 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSV) 2SJ334 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm - 4-V gate drive - Low drain source ON-resistance : RDS (ON) = 29 mΩ (typ.) - High forward transfer admittance : |Yfs| = 23 S (typ.) - Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) - Enhancement mode : Vth = 0.8 to 2.0 V (VDS = |
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