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| 2SJ506 Hitachi Semiconductor - Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = 10V, ID = 5A) Low drive current High speed switching 4V gate drive devices. Outline DPAK 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = |
| 2SJ506L Hitachi Semiconductor - Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = 10V, ID = 5A) Low drive current High speed switching 4V gate drive devices. Outline DPAK 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = |
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| 2SJ103 P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) - Toshiba Semiconductor 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 |
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