Semiconductor Informations

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| 2SJ580 Sanyo Semicon Device - Ultrahigh-Speed Switching Applications Ordering number : ENN6669 2SJ580 P-Channel Silicon MOSFET 2SJ580 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2062A [2SJ580] 4.5 1.6 1.5 Low ON-resistanse. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C |
| 2SJ0536 Silicon P-Channel MOS FET - Panasonic Semiconductor Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape, magazine pa |
| 2SJ103 P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) - Toshiba Semiconductor 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 |